首页> 外国专利> FABRICATION OF MICROFLUIDIC CHIPS HAVING ELECTRODES LEVEL WITH MICROCHANNEL WALLS

FABRICATION OF MICROFLUIDIC CHIPS HAVING ELECTRODES LEVEL WITH MICROCHANNEL WALLS

机译:具有微通道壁的具有电极层的微流体芯片的制造

摘要

The present invention is notably directed to method of fabrication of a microfluidic chip, comprising: providing a substrate, a face of which is covered by an electrically insulating layer; obtaining a resist layer covering one or more selected portions of the electrically insulating layer, at least a remaining portion of said electrically insulating layer not being covered by the resist layer; partially etching with a wet etchant a surface of the remaining portion of the electrically insulating layer to create a recess and/or an undercut under the resist layer; depositing the electrically conductive layer on the etched surface, such that the electrically conductive layer reaches the created recess and/or undercut; and removing the resist layer to expose a portion of the electrically insulating layer adjoining a contiguous portion of the electrically conductive layer. The present invention is further directed to microfluidic chips obtainable by such methods.
机译:本发明特别地涉及一种微流体芯片的制造方法,其包括:提供衬底,其表面被电绝缘层覆盖;获得覆盖电绝缘层的一个或多个选定部分的抗蚀剂层,所述电绝缘层的至少其余部分未被抗蚀剂层覆盖;用湿蚀刻剂部分蚀刻电绝缘层的其余部分的表面,以在抗蚀剂层下面形成凹槽和/或底切;在蚀刻的表面上沉积导电层,使得导电层到达所形成的凹部和/或底切;去除抗蚀剂层,以暴露与绝缘层的邻接部分邻接的绝缘层的一部分。本发明进一步涉及通过这种方法可获得的微流体芯片。

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