Sensor packaging using a low-temperature through-silicon via (TSV) technology and method for manufacturing the same

摘要

A method for manufacturing a sensor packaging according to an exemplary embodiment of the present disclosure includes: forming a via hole penetrating a main substrate by etching each of both surfaces of the main substrate; forming an insulating layer on a wall surface of the via hole and the both surfaces of the main substrate; combining a sub-substrate on which a metallic seed layer and a bonding layer having a pattern for exposing a part of the seed layer are laminated with the main substrate; forming a filling layer configured to cover an upper surface of the main substrate by filling metal in the via hole; and removing the sub-substrate from the main substrate.