Solid state storage device and reading control method thereof for read retry process with optimal read voltage set

摘要

A reading control method for a solid state storage device includes following steps. While the solid state storage device is in an idle mode, a background monitoring operation is performed on the first block and the second block. Consequently, a first optimal read voltage set corresponding to the first block and a second optimal read voltage set corresponding to the second block are acquired. In reading operation, a default read voltage set is provided to the non-volatile memory to read a data of the first block. If a data of the first block is not successfully decoded, a read retry process is performed on the first block and the first optimal read voltage set is provided to the non-volatile memory to read the data of the first block.