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Integrated structure of mems pressure sensor and mems inertia sensor

机译:记忆压力传感器和记忆惯性传感器的一体化结构

摘要

An integrated structure of an MEMS pressure sensor and an MEMS inertia sensor are provided, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate.
机译:提供了一种MEMS压力传感器和MEMS惯性传感器的集成结构,包括:形成在基板上的绝缘层,形成在该绝缘层上的第一下部电极和第二下部电极,还包括形成电极的第一上部电极。空气压敏电容器与第一下部电极一起,第二上部电极与第二下部电极一起形成参考电容器。进一步包括:惯性敏感结构,其由第三支撑部分支撑在基板上方;以及固定电极板,与惯性敏感结构一起形成惯性传感器的惯性检测电容器;盖体在基板上封装有由惯性感应结构和固定电极板构成的惯性检测电容器。

著录项

  • 公开/公告号US10407300B2

    专利类型

  • 公开/公告日2019-09-10

    原文格式PDF

  • 申请/专利权人 GOERTEK.INC;

    申请/专利号US201515554652

  • 发明设计人 GUOGUANG ZHENG;

    申请日2015-12-14

  • 分类号B81B7/02;G01L9/12;G01P15/125;G01P15/02;B81B3;B81B7;B81C1;G01L19/04;

  • 国家 US

  • 入库时间 2022-08-21 12:12:34

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