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Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
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机译:在SOI衬底,特别是FDSOI衬底上生产的晶体管与相应集成电路之间进行局部隔离的方法
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摘要
An integrated circuit may include an SOI substrate having a buried insulating layer, and a semiconductor film above the buried insulating layer. The semiconductor film may have first patterns in a first zone defining gate regions of first MOS transistors and also first dummy gate regions. The first zone may include two domains having a space therebetween, and the space may be filled by at least one insulating material and be situated between two dummy gate regions above a region of the supporting substrate without any insulating trench.
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