ELECTRICAL CHARACTERIZATION OF THICK LOCALIZED SOI SUBSTRATES MANUFACTURED BY RAPID THERMAL PROCESSING FOR HIGH VOLTAGE INTEGRATED CIRCUITS

摘要

We present hereafter the capabilities of a partial SOI substrate fabricated through the fusion and recrystallization of a polycrystalline layer over oxide using rapid thermal annealing. This process, called Lateral Epitaxial Growth over Oxide (LEGO), is developed for high voltage power integrated circuits. The measurement results performed on a dedicated test chip including both geometry variations of the SOI regions and different PMOS transistors are described and analyzed.