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Highly Scaled Linear GaN HEMT Structures
Highly Scaled Linear GaN HEMT Structures
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机译:大规模线性GaN HEMT结构
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摘要
A transistor includes a substrate, a channel layer coupled to the substrate, a source electrode coupled to the channel layer, a drain electrode coupled to the channel layer, and a gate electrode coupled to the channel layer between the source electrode and the drain electrode. The gate electrode has a length dimension of less than 50 nanometers near the channel layer, and the channel layer includes at least a first GaN layer and a first graded AlGaN layer on the first GaN layer.
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