Highly Linearized GaN HEMT Based Class E/F3 Power Amplifier

摘要

The study of a GaN based mixed mode Class E/F3 power amplifier is presented in this article. For large signal simulations, we used the Cree transistor's nonlinear device model CG2H40010F and simulation is done at Keysight’s Advanced Design System (ADS) platform. The harmonic balance (HB) simulator is run to select the most appropriate impedances for efficiency and linearity of PA. The simulation results are used to describe and analyze a Class E/F3 GaN-HEMT PA with lumped components operating at 3 GHz. The output power Pout at 1 dB compression is 40.23 dBm with a gain greater than 10 dB, drain efficiency (DE) ranges from 70% to 86% according to simulation results.