首页>
外国专利>
Bit Line Structures for Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
Bit Line Structures for Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
展开▼
机译:具有磁性隧道结器件的三维阵列的位线结构,包括环形自由磁层和平面参考磁层
展开▼
页面导航
摘要
著录项
相似文献
摘要
A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.
展开▼