Method to fabricate quantum dot field-effect transistors without bias-stress effect

摘要

Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.