首页> 外国专利> STANDARD CELL LAYOUT, SEMICONDUCTOR DEVICE HAVING ENGINEERING CHANGE ORDER (ECO) CELLS AND METHOD

STANDARD CELL LAYOUT, SEMICONDUCTOR DEVICE HAVING ENGINEERING CHANGE ORDER (ECO) CELLS AND METHOD

机译:具有工程变更单(ECO)电池和方法的标准电池布局,半导体器件

摘要

A cell, in a semiconductor device, including: first and second active areas in a semiconductor substrate on opposite sides of the first axis; first, third and fifth, and correspondingly collinear second, fourth and sixth, having long axes in a second direction perpendicular to the first direction; the (A) first, third and fifth, and (B) second, fourth and sixth, conductive structures correspondingly overlapping the second active area; the first and second conductive structures correspondingly being centered between the (C) third and fifth, and (D) fourth and sixth, conductive structures; and a seventh conductive structure; the fourth conductive structure being located over first and second gaps between corresponding ones of the third through sixth, conductive structures; and the fourth conductive structure occupying an area which substantially overlaps one of the first and second conductive structures and a corresponding one of the first and second gaps.
机译:一种半导体器件中的单元,包括:在第一轴的相对侧上的半导体衬底中的第一和第二有源区;第一,第三和第五,以及相应地共线的第二,第四和第六,具有在垂直于第一方向的第二方向上的长轴; (A)第一,第三和第五,以及(B)第二,第四和第六导电结构,分别与第二有源区重叠。第一和第二导电结构相应地居中在(C)第三和第五以及(D)第四和第六导电结构之间;第七导电结构;第四导电结构位于第三至第六导电结构中相应的第一和第二间隙之间。第四导电结构占据与第一和第二导电结构之一以及第一和第二间隙中的相应一个基本重叠的区域。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号