首页>
外国专利>
Process for forming semiconductor layers of different thickness in FDSOI technologies
Process for forming semiconductor layers of different thickness in FDSOI technologies
展开▼
机译:FDSOI技术中形成不同厚度的半导体层的工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
In fully depleted SOI transistors, specifically designed semiconductor materials may be provided for different types of transistors, thereby, for instance, enabling a reduction of hot carrier injection in transistors that are required to be operated at a moderately high operating voltage. To this end, well-controllable epitaxial growth techniques may be applied selectively for one type of transistor, while not unduly affecting the adjustment of material characteristics of a different type of transistor.
展开▼