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机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
Charged defects; two-dimensional semiconductors; arbitrary thickness;
机译:任意厚度和几何形状的二维半导体中的带电缺陷:几层黑磷的制定和应用
机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
机译:几层黑磷中依赖于厚度的三次谐波产生
机译:二维层状半导体中的点缺陷:物理及其应用
机译:破坏二维半导体中的活化光致发光:结合的带电的和自由的激子之间的相互作用
机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷