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机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute Troy New York 12180 USA;
State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China;
机译:任意厚度和几何形状的二维半导体中的带电缺陷:几层黑磷的制定和应用
机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷
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机译:任意厚度和几何形状的二维半导体中的带电缺陷:配方和应用于几层黑色磷