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Antifuse unit cell of nonvolatile memory device for enhancing data sense margin and nonvolatile memory device with the same
Antifuse unit cell of nonvolatile memory device for enhancing data sense margin and nonvolatile memory device with the same
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机译:用于增强数据感测裕度的非易失性存储设备的反熔丝单位单元以及具有该单元的非易失性存储设备
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摘要
Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.
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