首页> 外国专利> PRESSURE SENSOR STRUCTURE CONFIGURED FOR WAFER-LEVEL CALIBRATION

PRESSURE SENSOR STRUCTURE CONFIGURED FOR WAFER-LEVEL CALIBRATION

机译:晶圆级校准配置的压力传感器结构

摘要

A wafer structure configured for wafer-level calibration of a plurality of pressure sensors, the wafer structure includes: a microelectromechanical systems (MEMS) wafer that includes a plurality of MEMS dice that are separated by a plurality of MEMS-wafer dicing areas; an application-specific integrated circuit (ASIC) wafer that includes a plurality of ASIC-wafer dice that are separated by a plurality of ASIC-wafer dicing areas; a Film on Wafer (FOW) that bonds the MEMS wafer to the ASIC wafer; a plurality of thru silicon vias (TSVs) extending through the ASIC wafer; and a plurality of metallizations extending through the FOW thereby creating an electrical connection between the ASIC wafer and the MEMS wafer thereby enabling wafer-level calibration of the plurality of pressure sensors. The MEMS wafer and the ASIC wafer may each include alignment features for aligning the MEMS wafer with the ASIC wafer.
机译:一种配置为用于多个压力传感器的晶片级校准的晶片结构,该晶片结构包括:微机电系统(MEMS)晶片,其包括由多个MEMS晶片划片区分开的多个MEMS晶片;一种专用集成电路(ASIC)晶片,其包括由多个ASIC晶片切割区分开的多个ASIC晶片。晶圆上薄膜(FOW),用于将MEMS晶圆粘合到ASIC晶圆;多个贯通硅通孔(TSV)延伸穿过ASIC晶片;多个金属化层延伸通过FOW,从而在ASIC晶片和MEMS晶片之间建立电连接,从而实现多个压力传感器的晶片级校准。 MEMS晶片和ASIC晶片可各自包括用于将MEMS晶片与ASIC晶片对准的对准特征。

著录项

  • 公开/公告号US2019194014A1

    专利类型

  • 公开/公告日2019-06-27

    原文格式PDF

  • 申请/专利权人 CONTINENTAL AUTOMOTIVE SYSTEMS INC.;

    申请/专利号US201816225176

  • 发明设计人 WLODZIMIERZ CZARNOCKI;

    申请日2018-12-19

  • 分类号B81B7/02;B81B7;

  • 国家 US

  • 入库时间 2022-08-21 12:08:40

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