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SEMICONDUCTOR DEVICE INCLUDING POWER-GRID-ADAPTED ROUTE-SPACING AND METHOD FOR GENERATING LAYOUT DIAGRAM OF SAME

机译:包含功率自适应路由间距的半导体器件及其生成布局图的方法

摘要

A semiconductor device includes: a conductive layer M(h) including first and second power grid (PG) segments and first routing segments which are conductive, where h is an integer and h≥1; long axes of the first and second PG segments and the first routing segments extending in a first direction; the first and second PG segments being separated in a second direction by a PG gap having a midpoint, the second direction being substantially perpendicular to the first direction. The first routing segments are distributed: between the first and second PG segments; and substantially uniformly in the second direction with respect to the midpoint of the PG gap.
机译:一种半导体器件,包括:导电层M(h),其包括第一和第二电力网(PG)段以及导电的第一布线段,其中,h是整数,h≥ 1。第一和第二PG段的长轴和第一路由段在第一方向上延伸;第一和第二PG段在第二方向上被具有中点的PG间隙隔开,第二方向基本垂直于第一方向。第一路由段是分布的:在第一和第二PG段之间;相对于PG间隙的中点在第二方向上基本均匀。

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