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SEMICONDUCTOR DEVICE INCLUDING POWER-GRID-ADAPTED ROUTE-SPACING AND METHOD FOR GENERATING LAYOUT DIAGRAM OF SAME
SEMICONDUCTOR DEVICE INCLUDING POWER-GRID-ADAPTED ROUTE-SPACING AND METHOD FOR GENERATING LAYOUT DIAGRAM OF SAME
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机译:包含功率自适应路由间距的半导体器件及其生成布局图的方法
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摘要
A semiconductor device includes: a conductive layer M(h) including first and second power grid (PG) segments and first routing segments which are conductive, where h is an integer and h≥1; long axes of the first and second PG segments and the first routing segments extending in a first direction; the first and second PG segments being separated in a second direction by a PG gap having a midpoint, the second direction being substantially perpendicular to the first direction. The first routing segments are distributed: between the first and second PG segments; and substantially uniformly in the second direction with respect to the midpoint of the PG gap.
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