SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND THEIR METHODS OF FABRICATION

摘要

A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, where the free magnet structure includes a free magnet that is dipole coupled with a magnetic stability enhancement layer. The pMTJ device further includes a fixed layer and a tunnel barrier between the free layer and the fixed layer.