SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED THERMAL STABILITY AND METHODS TO FORM SAME

摘要

A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spin orbit torque electrode has a uppermost surface area that is 10-20 times larger than a lowermost surface area of the MTJ memory device. The MTJ memory device includes a storage layer disposed on the spin orbit torque electrode, a tunnel barrier such as an MgO disposed on the storage layer and a fixed magnetic layer disposed on the tunnel barrier.