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METHOD OF OPERATING RESISTIVE MEMORY DEVICE CAPABLE OF REDUCING WRITE LATENCY
METHOD OF OPERATING RESISTIVE MEMORY DEVICE CAPABLE OF REDUCING WRITE LATENCY
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机译:一种可降低写延迟的电阻式存储器的操作方法
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摘要
Provided is a method of operating a resistive memory device including a memory cell array. The method includes the resistive memory device performing a first write operation in response to an active command and a write command and performing a second write operation in response to a write active command and the write command. The first write operation includes a read data evaluation operation for latching data read from the memory cell array in response to the active command. The second write operation excludes the read data evaluation operation.
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