PEROVSKITE SURFACE DEFECT PASSIVATION USING ZWITTERIONIC AMINO ACIDS

摘要

Semiconductor devices including a cathode layer, an anode layer, an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer, and a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a zwitterionic amino acid, such as valine or phenylalanine or other amino acid that passivates both cationic and anionic defects in the surface of the active layer.