SEMICONDUCTOR DEVICE INCLUDING NON-MONOCRYSTALLINE STRINGER ADJACENT A SUPERLATTICE-STI INTERFACE

摘要

A semiconductor device may include a semiconductor substrate and first and second spaced apart shallow trench isolation (STI) regions therein, and a superlattice on the semiconductor substrate and extending between the first and second STI regions. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first semiconductor stringer including a non-monocrystalline body at an interface between a first end of the superlattice and the first STI region, and a gate above the superlattice.