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METHODS OF FORMING SEMICONDUCTORS USING ETCHING EFFECT PREDICTIONS AND METHODS FOR DETERMINING INPUT PARAMETERS FOR SEMICONDUCTOR FORMATION
METHODS OF FORMING SEMICONDUCTORS USING ETCHING EFFECT PREDICTIONS AND METHODS FOR DETERMINING INPUT PARAMETERS FOR SEMICONDUCTOR FORMATION
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机译:利用刻蚀效应预测形成半导体的方法和确定半导体形成的输入参数的方法
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摘要
An etching effect prediction method includes determining a sample area of a mask pattern in which etch bias is to be predicted, determining input parameters indicating physical characteristics affecting an etching process undertaken in the sample area, comparing an output value obtained by inputting the input parameters to an artificial neural network, to a measured value of the etch bias that occurred in the sample area, and operating the artificial neural network until a difference between the output value and the measured value is equal to or less than a predetermined reference value.
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