首页> 外国专利> METHODS AND APPARATUS FOR HIGH THROUGHPUT SEM AND AFM FOR CHARACTERIZATION OF NANOSTRUCTURED SURFACES

METHODS AND APPARATUS FOR HIGH THROUGHPUT SEM AND AFM FOR CHARACTERIZATION OF NANOSTRUCTURED SURFACES

机译:高通量扫描电镜和原子力显微镜表征纳米结构表面的方法和装置

摘要

A system and method is provided for of characterizing nanostructured surfaces. A nanostructure sample is placed in an SEM chamber and imaged. The system and method locates one of the nanostructures using images from the SEM imaging, excises a top portion of the nanostructure, places said top portion on a substrate such that the nanostructures are perpendicular to the substrate and a base of the top portion contacts the substrate, performs high energy ion beam assisted deposition of metal at the base to attach the top portion to the substrate, SEM imaging the top portions in the SEM chamber, determining coordinates of the top portions relative to the substrate from the SEM imaging of the top portions, placing the substrate in an AFM chamber, and performing AFM imaging of the top portions using the coordinates previously determined.
机译:提供了用于表征纳米结构表面的系统和方法。将纳米结构样品置于SEM室中并成像。该系统和方法使用来自SEM成像的图像定位纳米结构之一,切除纳米结构的顶部,将所述顶部放置在基板上,使得纳米结构垂直于基板并且顶部的底部接触基板。 ,在底部进行高能离子束辅助的金属沉积,以将顶部附着到基板上,对SEM室中的顶部进行SEM成像,并根据顶部的SEM成像确定顶部相对于基板的坐标,将基板放置在AFM室中,并使用先前确定的坐标对顶部进行AFM成像。

著录项

  • 公开/公告号US2018330918A1

    专利类型

  • 公开/公告日2018-11-15

    原文格式PDF

  • 申请/专利权人 NANOWEAR INC.;

    申请/专利号US201815974176

  • 发明设计人 VIJAY VARADAN;PRATYUSH RAI;GYANESH MATHUR;

    申请日2018-05-08

  • 分类号H01J37/28;H01J37/20;G01Q60/42;

  • 国家 US

  • 入库时间 2022-08-21 12:06:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号