TECHNIQUE FOR PATTERNING ACTIVE REGIONS OF TRANSISTOR ELEMENTS IN A LATE MANUFACTURING STAGE

摘要

When patterning active regions for sophisticated semiconductor devices, the cutting through active semiconductor regions previously patterned along a first lateral direction so as to obtain elongated semiconductor lines may be performed in a late manufacturing stage. That is, the cutting may be performed after patterning at least a portion of the gate electrode structures, thereby achieving a self-aligned patterning regime and also contributing to a reduction of strain loss.