首页>
外国专利>
Technique for patterning active regions of transistor elements in a late manufacturing stage
Technique for patterning active regions of transistor elements in a late manufacturing stage
展开▼
机译:在后期制造阶段对晶体管元件的有源区进行构图的技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
When patterning active regions for sophisticated semiconductor devices, the cutting through active semiconductor regions previously patterned along a first lateral direction so as to obtain elongated semiconductor lines may be performed in a late manufacturing stage. That is, the cutting may be performed after patterning at least a portion of the gate electrode structures, thereby achieving a self-aligned patterning regime and also contributing to a reduction of strain loss.
展开▼