SINGLE-CRYSTAL ALN PRODUCTION METHOD AND SINGLE-CRYSTAL ALN

摘要

This single-crystal AlN production method performs a process comprising a first growth layer formation step and a second growth layer formation step. In the first growth layer formation step, an AlN-containing first growth layer is formed wherein a void layer which is a void in a shape having a longitudinal direction thereof oriented along the a-axis of the crystal, as a result of preferential crystal growth in the a-axis direction over that in the c-axis direction. In the second growth layer formation step, a second growth layer containing single-crystal AlN that has been grown as a result of preferential crystal growth in the c-axis direction over that in the a-axis direction is formed on the first growth layer, by performing the process of, with respect to the processing conditions for the first growth layer formation step, raising the temperature and/or lowering the partial pressure of a nitrogen-based gas which is a gas at least containing N atoms.