SEAM-FREE SILICON NITRIDE GAP-FILL TECHNIQUES FOR HIGH ASPECT RATIO TRENCHES

摘要

An integrated circuit device includes: a semiconductor structure having a high aspect ratio (HAR) feature, the HAR feature having a depth of between 25 nanometers (nm) and 250 nm, a width of between 5 nm and 50 nm, and a depth-to-width aspect ratio of 5:1 or more; and a gap-fill material at least partially filling the HAR feature, the gap-fill material including silicon and nitrogen and being substantially free of a seam located between opposing sides of the HAR feature. A semiconductor process platform includes a nitrogen radical generator to generate nitrogen radicals for delivery to one of the zones, each zone being configured to deliver a separate precursor of a deposition cycle. A method of semiconductor device fabrication includes reacting surfaces of the HAR feature with a silicon precursor, and reacting the silicon-precursed surfaces with nitrogen plasma to form a monolayer of silicon nitride.