HIGH TEMPERATURE GATE DRIVER FOR SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

摘要

A high temperature (HT) gate driver for Silicon Carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) uses commercial off-the-shelf COTS discrete components, and has an integrated short-circuit or overcurrent protection circuit and under voltage lock out (UVLO) protection circuit.