Copper Indium Gallium Selenide Absorption Layer And Preparation Method Thereof, Solar Cell And Preparation Method Thereof

摘要

#$%^&*AU2018241050A120190822.pdf#####ABSTRACT A preparation method of a copper indium gallium selenide (CIGS) absorption layer, including: forming a prefabricated copper indium gallium film on a substrate; placing the prefabricated copper indium gallium film in a reaction chamber having a first temperature threshold; introducing a selenium atmosphere having a first carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts within a first duration to form an unsaturated In-Se binary phase and an unsaturated Cu-Se binary phase on a surface of the prefabricated copper indium gallium film; introducing a selenium atmosphere having a second carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts within a second preset duration to obtain a prefabricated CIGS film; annealing the prefabricated CIGS film within a second preset temperature threshold and a third preset duration to obtain a solar cell absorption layer.sequentially sputtering a copper gallium alloy layer and an S100 indium layer on a substrate on which a back electrode is deposited to form a prefabricated copper indium gallium film placing the prefabricated copper indium gallium film in a S200 reaction chamber having a first preset temperature threshold; introducing a selenium atmosphere having a first preset carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts in the selenium atmosphere having the first carrier gas flow value for a first preset duration S300 introducing a selenium atmosphere having a second preset carrier gas flow value into the reaction chamber, such that the prefabricated copper indium gallium film reacts in the selenium atmosphere having the second carrier gas flow value for a second preset duration S400 annealing the substrate within a second preset temperature threshold and a third preset duration to obtain a CIGS absorption layer Fig.1