METHOD FOR MANUFACTURING LOW-TEMPERATURE POLYSILICON DEVICE AND METHOD FOR FLATTENING POLYSILICON LAYER

摘要

A method for flattening a polysilicon layer (4) of a low-temperature polysilicon device, comprising: step S1, crystallizing a low-temperature polysilicon device; step S2, forming a flat coating layer (5) on an uneven surface of the polysilicon layer (4) of the crystallized low-temperature polysilicon device by means of a coating process; step S3, curing the flat coating layer (5); and step S4, removing the cured flat coating layer (5) and polysilicon protrusions (41) by means of a removal process to form the polysilicon layer (4) having a flat surface. According to the method, the rough and uneven surface of the polysilicon layer (4) can be flattened well, so that the problems of film breakage, incomplete etching, and point discharge caused by roughness of the polysilicon layer (4) are mitigated, thereby improving the production yield of the low-temperature polysilicon device.