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Self-Assembled Monolayer-Based Selective Modification on Polysilicon Nanobelt Devices

机译:多晶硅纳米带器件上基于自组装单层的选择性修饰

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In this study, a self-assembled monolayer (SAM) of methoxy-poly (efhylene-glycol)-silane (mPEG-sil) was used to modify the silicon dioxide surface of polysilicon nanodevices (PNDs) to act as a passivation layer that inhibits nonspecific binding of proteins and reduces localized Joule heating power. Selective modifications of 3-aminopropyltrimethoxysilane (APTMS), NHS-biotin and dye-labeled Streptavidin on the removal regions were characterized. These PNDs, which consist of a two-level doping profile, were designed to confine heat in the low-level doping region during localized Joule heating. Localized Joule heating with pulse bias was examined in both vacuum and ambient, which indicated the removal region was longer in vacuum for the same pulse bias. Moreover, a comparison of selectively and nonselectively modified PNDs observed in time-lapsed fluorescence detection of dye-labeled Streptavidin showed a higher increasing rate in fluorescence intensity (~2X enhancement) in the selectively modified PNDs, Finally, a COMSOL simulation was employed to evaluate the temperature distribution in the PNDs, with results showing that heat confinement was observed in the low-level doping region and a temperature very close to 673 K was achieved while applying a pulse voltage (40 V, S μs) to remove mPEG-sil.
机译:在这项研究中,甲氧基-聚(乙烯-乙二醇)-硅烷(mPEG-sil)的自组装单分子层(SAM)用于修饰多晶硅纳米器件(PND)的二氧化硅表面,以充当钝化层来抑制蛋白质的非特异性结合,降低了局部焦耳热功率。表征了3-氨基丙基三甲氧基硅烷(APTMS),NHS-生物素和染料标记的链霉亲和素在去除区域上的选择性修饰。这些PND由两级掺杂分布组成,旨在在局部焦耳加热期间将热量限制在低级掺杂区域中。在真空和环境下都检查了带有脉冲偏压的局部焦耳加热,这表明对于相同的脉冲偏压,在真空中去除区域更长。此外,在染料标记的链霉亲和素的延时荧光检测中观察到的选择性和非选择性修饰的PND的比较显示,选择性修饰的PND中荧光强度的增加率更高(〜2倍增强),最后,通过COMSOL仿真进行评估PND中的温度分布,结果表明在低浓度掺杂区观察到热限制,并且在施加脉冲电压(40 V,Sμs)去除mPEG-sil时达到了非常接近673 K的温度。

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