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METHOD FOR MEASURING FE CONCENTRATION IN P TYPE SILICON WAFER AND SPV MEASUREMENT DEVICE
METHOD FOR MEASURING FE CONCENTRATION IN P TYPE SILICON WAFER AND SPV MEASUREMENT DEVICE
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机译：P型硅片和SPV测量装置中Fe浓度的测量方法
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摘要
The present invention provides a method for measuring Fe concentration in a p type silicon wafer by SPV, which is capable of improving measurement precision for Fe concentrations of 1 × 109/cm3 or less. The present invention is a method for measuring Fe concentration in a p type silicon wafer characterized in that when finding the Fe concentration in a p type silicon wafer on the basis of measurements using SPV performed on the p type silicon wafer, measurements are performed in an atmosphere with the total concentration for Na+, NH4+ and K+ being 1.750 µg/m3 and the total concentration for F−, Cl−, NO2−, PO43−, Br−, NO3−, and SO42− being 0.552 µg/m3.
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机译：本发明提供了一种通过SPV测量p型硅片中Fe浓度的方法，能够提高Fe浓度为1×10 9 / cm 3 的测量精度。或更少。本发明是一种用于测量p型硅晶片中的Fe浓度的方法，其特征在于，当基于使用在p型硅晶片上进行的SPV的测量而确定p型硅晶片中的Fe浓度时，在大气中进行测量。 Na + ，NH 4 + 和K + 的总浓度为1.750 µg / m 3 以及F -，Cl -，NO 2 -，PO 4 3 -，Br -，NO 3 - ，SO 4 2 -为0.552 µg / m 3 。
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