METHOD FOR THE FABRICATION OF SOLUTION PROCESS, ULTRA-LOW OPERATING VOLTAGE, STABLE ORGANIC FIELD EFFECT TRANSISTOR

摘要

The present invention reports an ultra-low voltage operated, highly stable, solution processable p-type Organic Field Effect Transistor (OFET) device and a method for fabricating such an OFET device. The OFET device of the present invention includes a base substrate (2), a gate electrode (3) deposited on said base substrate; layered hybrid dielectrics deposited on said gate electrode having top (4) and bottom (6) dielectric layer of low dielectric constant based dielectric materials and intermediate dielectric layer (5) of high dielectric constant based dielectric material, a p-type polymer organic semiconducting layer (7) based active channel deposited on top of said layered hybrid dielectrics, and a source electrode (6) and a drain electrode (9) deposited on the top side of said p-type polymer organic semiconducting layer.