PURPOSE: A thin-film field-effect transistor with an organic-inorganic hybrid semiconductor requiring low operating voltages is provided to achieve high field effect mobility levels at very low operating voltages by using the gate voltage dependence of the organic-inorganic hybrid semiconductor. CONSTITUTION: A transistor device structure comprises a substrate on which an electrically conducting gate electrode is disposed; a layer of high dielectric constant gate insulator disposed on the gate electrode; an electrically conductive source electrode and an electrically conductive drain electrode disposed on the layer of gate insulator; a layer of an organic-inorganic hybrid semiconductor disposed on the gate insulator and the source electrode and the drain electrode. The gate insulator has a high dielectric constant.
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