METHOD FOR THE FABRICATION OF ULTRALOW VOLTAGE OPERATED, REDUCED BIAS STRESS, MULTI-LAYER DIELECTRIC SYSTEM COMPRISING N-TYPE ORGANIC FIELD EFFECT TRANSISTORS

摘要

The present invention reports an ultra-low voltage operated, highly stable, n-type Organic Field Effect Transistor (OFET) device and a method for fabricating such OFET device. The OFET device of the present invention includes a base substrate (1); a gate electrode (3) deposited on said base substrate; layered hybrid dielectrics (4-5-6) deposited on said gate electrode having top and bottom dielectric layer of low dielectric constant based dielectric materials and intermediate dielectric layer of high dielectric constant based dielectric material; n-type organic semiconducting layer (7) based active channel deposited on top of said layered hybrid dielectrics and a source electrode and a drain electrode (8, 9) deposited on the top side of said n-type organic semiconducting layer.