WIRE BONDING BETWEEN ISOLATION CAPACITORS FOR MULTICHIP MODULES

摘要

A packaged multichip device includes a first IC die (110) with an isolation capacitor using a top metal layer as its top plate (118) and a lower metal layer as its bottom plate (119). A second IC die (120) has a second isolation capacitor using its top metal layer as its top plate (128) and a lower metal layer as its bottom plate (129). A first bondwire end (130a) is coupled to one top plate and a second bondwire end (130b) is coupled to the other top plate. The second bondwire end (130b) includes a stitch bond (134) including a wire approach angle not normal to the top plate it is bonded to and is placed so that the stitch bond's center is positioned at least 5% further from an edge of this top plate on a bondwire crossover side compared to a distance of the stitch bond's center from the side opposite the bondwire crossover side.