TRANSISTORS INCLUDING FIRST AND SECOND SEMICONDUCTOR MATERIALS BETWEEN SOURCE AND DRAIN REGIONS AND METHODS OF MANUFACTURING THE SAME

摘要

Methods, apparatus, systems and articles of manufacture are disclosed for transistors including first and second semiconductor materials between source and drain regions. An example apparatus includes a transistor comprising a first semiconductor material including gallium and nitrogen and a second semiconductor material including gallium and oxygen, where the second semiconductor material is adjacent the first semiconductor material. The disclosed example apparatus further includes a source proximate the first semiconductor material and spaced apart from the second semiconductor material and a drain proximate the second semiconductor material and spaced apart from the first semiconductor material. The disclosed example apparatus also includes a gate located between the source and the drain.