TUNGSTEN SILICIDE TARGET MEMBER AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING TUNGSTEN SILICIDE FILM

摘要

Provided is a tungsten silicide target member for efficiently suppressing generation of particles during sputtering film formation. A tungsten silicide target member having a two-phase structure of a WSi₂ phase and a Si phase, wherein the compositional formula thereof in terms of atomic ratio is WSi_x (where X 2.0), the ratio (I1/S1) of the total area I1 of Si grains in which the area per Si particle is 63.6 µm² or greater with respect to the total area S1 of Si grains constituting the Si phase when a sputtering surface is observed is 5% or less, and the Weibull modulus of the flexural strength is 2.1 or greater.