METHOD AND SYSTEM FOR INSPECTION OF DEFECTIVE MTJ CELL IN STT-MRAM

摘要

The present invention relates to a film quality inspection method for providing a stress evaluation scheme for inspection of film quality of a magnetic tunnel junction (MTJ) element in a spin-transfer torque magnetic random access memory (STT-MRAM), and a system therefor, wherein a bipolar signal and a unipolar signal including a unipolar hole (positive polarity) and a unipolar electron (negative polarity) are simultaneously applied to the same MTJ element, and then according to the result of comparison of cycling gaps, the quality of a thin film having a thickness about 1nm can be inspected.