Method of measuring carbon concentration of a silicon sample, method of manufacturing a silicon single crystal ingot, silicon monocrystalline ingot and silicon wafer

摘要

A method of introducing a hydrogen atom into a silicon sample to be measured and a method of imparting to the evaluation by an evaluation method of evaluating a trap level in the bandgap of silicon without conducting the electron beam irradiation treatment of the silicon sample to be measured in which the hydrogen atom is introduced , Based on an evaluation result of at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV among the evaluation results obtained by the evaluation, And determining the carbon concentration, wherein the obtained carbon concentration is less than 1.0E + 16 atoms / cm 3 .