Approach to Deformation Engineering of Vertical Magnetic Tunnel Junction (PMTJS) and Resultant Structure

摘要

An approach to the deformation engineering of perpendicular magnetic tunnel junctions (pMTJ) and the resulting structure is described. In one example, the memory structure comprises a pMTJ element disposed over a substrate. The lateral strain-inducing material layer is disposed on the pMTJ element. An interlayer dielectric (ILD) layer is disposed laterally adjacent to both the pMTJ element and the lateral strain-inducing material layer. The ILD layer has a top surface that is coplanar or substantially coplanar with the top surface of the lateral strain-inducing material layer.