首页> 外国专利> TSV APPARATUS AND METHOD FOR REPAIRING CLUSTERED FAULT IN IRREGULARLY PLACED THROUGH SILICON VIAS

TSV APPARATUS AND METHOD FOR REPAIRING CLUSTERED FAULT IN IRREGULARLY PLACED THROUGH SILICON VIAS

机译:TSV装置和通过硅管不规则放置的群集故障的修复方法

摘要

The present invention relates to a technique for determining a repair structure of an unbalanced through silicon via (TSV) in consideration of a group failure, wherein a processor according to an embodiment includes a semiconductor chip, Through silicon vias (TSVs) located in the at least one region, and a redundant through silicon vias (TSV) are formed in consideration of the calculated density, And a through silicon via (TSV) disposed in the at least one region including the disposed extra via silicon vias (TSV). And a connection performing unit for performing connection to the through silicon vias (TSV) W may include a generator for generating a repair geometry repair geometry for the semiconductor chip.
机译:本发明涉及一种考虑到组故障来确定不平衡的贯通硅通孔(TSV)的修复结构的技术,其中,根据一个实施例的处理器包括半导体芯片,位于硅通孔中的贯通硅通孔(TSV)。考虑到计算出的密度,形成至少一个区域和冗余的硅通孔(TSV),并且在包括所布置的额外的硅通孔(TSV)的至少一个区域中布置的硅通孔(TSV)。用于执行到硅通孔(TSV)W的连接的连接执行单元可以包括用于产生用于半导体芯片的修复几何结构修复几何形状的发生器。

著录项

  • 公开/公告号KR101918961B1

    专利类型

  • 公开/公告日2018-11-15

    原文格式PDF

  • 申请/专利权人 주식회사 엑시콘;

    申请/专利号KR20170006908

  • 发明设计人 강성호;장재원;

    申请日2017-01-16

  • 分类号H01L21/48;H01L21/66;H01L23/48;H01L23/498;H01L23/522;H01L23/538;

  • 国家 KR

  • 入库时间 2022-08-21 11:52:10

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