A method for fabricating an optoelectronic device comprising a plurality of gallium nitride diodes

摘要

The present invention relates to a method of manufacturing an optoelectronic device, comprising the steps of: a) providing an active diode stack (150) comprising at least a first doped semiconductor layer (153) and a second doped semiconductor layer (157) To the surface of the integrated control circuit 110 including the metal connection pad 113 of the control circuit 110 so that the second layer 157 of the stack is electrically connected to the metal pad 113 of the control circuit 110 step; And b) forming a trench (170) in the active stack (150) defining a boundary of a plurality of diodes (172) connected to different metal pads (113) of the control circuit