Physical vapor deposition (PVD) plasma energy control by dynamic magnetron control

摘要

Methods, apparatus, and systems for controlling the processing of substrates within a process chamber are described herein. In some embodiments, a method of controlling a substrate process in a process chamber includes: determining a position of a movable magnetron in a process chamber relative to a reference position on a surface of the substrate; And adjusting at least one power supply power parameter affecting substrate processing based on the determined position of the magnetron, for example, to control at least one of a deposition rate or an etch rate of substrate processing. In one embodiment, the regulated power parameter is at least one power set point of the at least one power supply's direct current (DC) source power, radio frequency (RF) bias power, DC shielding bias voltage, or electromagnetic coil current.