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首页> 外文期刊>Journal of nanomaterials >ZnO Nanowire Formation by Two-Step Deposition Method Using Energy-Controlled Hollow-Type Magnetron RF Plasma
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ZnO Nanowire Formation by Two-Step Deposition Method Using Energy-Controlled Hollow-Type Magnetron RF Plasma

机译:能量控制空心型磁控管射频等离子体通过两步沉积法形成ZnO纳米线

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ZnO nanowire was produced in RF (radio frequency) discharge plasma. We employed here a two-step deposition technique. In the 1st step, zinc atoms were sputtered from a zinc target to create zinc nuclei on a substrate before the growth of ZnO nanostructure. Here, we used pure argon plasma for physical sputtering. In the 2nd step, we employed an oxygen discharge mixed with argon, where oxygen radicals reacted with zinc nuclei to form ZnO nanostructures. Experimental parameters such as gas flow ratio and target bias voltage were controlled in O_2/Ar plasma. Properties of the depositions were analysed by SEM and Raman spectroscopy. We found that many folded and bundled nanowires formed in the 2nd step. The diameter of wires was typically 10-100 nm. We also discussed a growth mechanism of ZnO nanowires.
机译:ZnO纳米线是在RF(射频)放电等离子体中产生的。我们在这里采用了两步沉积技术。在第一步中,在生长ZnO纳米结构之前,先从锌靶溅射锌原子,以在基板上形成锌核。在这里,我们使用纯氩等离子体进行物理溅射。在第二步中,我们使用了与氩气混合的氧气放电,其中氧自由基与锌核反应形成ZnO纳米结构。在O_2 / Ar等离子体中控制气体流量比和目标偏置电压等实验参数。通过SEM和拉曼光谱分析沉积物的性质。我们发现在第二步中形成了许多折叠和捆束的纳米线。导线的直径通常为10-100 nm。我们还讨论了ZnO纳米线的生长机理。

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