THIN FILM TRANSISTOR INCLUDING HIGH-K DIELECTRIC INSULATING THIN FILM, AND METHOD FOR MANUFACTURING THEREOF

摘要

Provided are a thin transistor and a manufacturing method thereof. More particularly, The present invention relates to a thin transistor comprising: a substrate; a gate electrode on the substrate; a gate insulating film; a semiconductor layer; and a source electrode and a drain electrode, wherein the gate insulating film is a ternary high-k dielectric material of A2-XBXO3, wherein A is any one selected from the group consisting of aluminum, silicon, gallium, germanium, neodymium, gadolinium, vanadium, lutetium and actinium, wherein B is any one selected from the group consisting of yttrium, lanthanum, zirconium, hafnium, tantalum, titanium, vanadium, nickel, silicon and ytterbium, wherein the A and B are different elements.;COPYRIGHT KIPO 2019