IISnS Method for manufacturing of tin sulfide IISnS thin film

摘要

The present invention relates to a method to form a thin film of tin sulfide (II) (SnS), capable of providing a high-quality tin sulfide (II) thin film without an impurity formed on a substrate. According to the present invention, the method to form a thin film of tin sulfide (II) is a method to form a tin sulfide (II) thin film on a substrate in a chemical vapor deposition method using a tin precursor and a sulfide precursor. The tin precursor is an organometallic compound which has an oxidation value of tin is +2, and the temperature of the substrate to form the tin sulfide (II) thin film is within a range of 90 to 300°C.