Seed wafers for GAN thickening using gaseous or liquid phase epitaxy

摘要

Embodiments of the present invention are directed to fabricating a wafer comprising a high quality thin single crystal GaN layer that serves as a template for the formation of additional GaN material. A bulk ingot of GaN material is implanted to form a cleaved area beneath the surface. The injected bulk material is bonded to a substrate having a lattice and / or a coefficient of thermal expansion (CTE) compatible with GaN. Examples of such substrate materials may include, but are not limited to, AlN and mullite. The GaN seed layer is transported from the implanted bulk material to the substrate surface by a controlled cleaving process. The resulting combination of substrate and GaN seed layer can form a template for subsequent growth of high quality GaN overlying it. The growth of high-quality GaN can be accomplished using either liquid phase epitaxy (LPE) or gas phase epitaxy, for example, metal-organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy Or by using a technique such as hydride vapor phase epitaxy (HVPE).