Method and system for performing defect detection or characterization of a layer of a semiconductor device or semi-processed semiconductor device

摘要

The present invention relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor device or semi-fabricated semiconductor device using an atomic force microscope system. The system includes a probe having a probe tip and is configured to position the probe tip with respect to the element such that the probe tip is in contact between the probe tip and the surface of the element. The system includes a sensor that provides an output signal indicative of the position of the probe tip. The method includes: scanning a surface with a probe tip; Applying an acoustic vibration signal to the device; Obtaining an output signal indicative of the position of the probe tip; Monitoring probe tip movement to map the surface of the semiconductor device during scanning, and utilizing portions of the output signal to map contact stiffness indicative of bond strength.